发明公开
- 专利标题: LOW NOISE CHARGE AMPLIFICATION CCD
- 专利标题(中): 低噪声电荷放大CCD
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申请号: EP04821132.0申请日: 2004-09-13
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公开(公告)号: EP1673811A2公开(公告)日: 2006-06-28
- 发明人: ATLAS, Eugene , WADSWORTH, Mark , KULLMAN, Richard, H. , NETER, Sarit
- 申请人: Imagerlabs, Inc.
- 申请人地址: 5002 Tamarack Way Irvine CA 92612 US
- 专利权人: Imagerlabs, Inc.
- 当前专利权人: Imagerlabs, Inc.
- 当前专利权人地址: 5002 Tamarack Way Irvine CA 92612 US
- 代理机构: W.P. Thompson & Co.
- 优先权: US503181P 20030915; US936897 20040909
- 国际公布: WO2005067443 20050728
- 主分类号: H01L27/148
- IPC分类号: H01L27/148
摘要:
A charge coupled device (CCD) includes a low noise charge gain circuit that amplifies charge of a cell dependent upon the charge accumulated by the cell. The low noise charge gain circuit receives clocking signals, such as from an input diode, which allow charge to accumulate in a reservoir well and then flow into a receiving well. The low noise charge gain circuit also receives a voltage signal corresponding to charge accumulated on an associated cell. The amount of charge flowing into the receiving well depends on this voltage signal.
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