发明公开
EP1681608A3 Electronic circuit, semiconductor device, electronic equipment, and timepiece 失效
电子电路,半导体装置,电子设备和时钟

Electronic circuit, semiconductor device, electronic equipment, and timepiece
摘要:
An electronic circuit has a supply voltage generation circuit (100) and a crystal oscillation circuit (10) driven the supply voltage generation circuit (100). The supply voltage generation circuit (100) comprises: a first voltage generation circuit (110) for creating a reference voltage (Vref1), and a second voltage generation circuit (130) for creating said supply voltage (Vreg) to have a predetermined relationship with said reference voltage (Vref1). The second voltage generation circuit (130) comprises: a differential amplifier (140) for amplifying the difference between said reference voltage (Vref1) and a comparison voltage (Vref2); a constant-current source (150-2); a circuit having a voltage-control transistor (132) to which the constant current of said constant-current source (150-2) is supplied, and which has one end connected to said constant-current source (150-2); and an output transistor (134) which is connected between another end of said voltage-control transistor (132), and a circuit node being at a predetermined second potential, the resistance of said output transistor (134) being controlled by the output of said differential amplifier. The comparison voltage (Vref2) is output from said one end of said voltage-control transistor (132), using a first potential as reference, while said supply voltage (Vreg) is output from said other end of said voltage-control transistor (132). The constant current is set to a value within a saturated operating region of the voltage-control transistor (132), so that the sum of the magnitude of variation of potential difference between said comparison voltage (Vref2) and said supply voltage (Vreg) which are potentials at respective ends of said voltage-control transistor (132) with a variation of temperature within a guaranteed operating temperature range and one of the magnitude of variation of said reference voltage (Vref1) of said first voltage generation circuit (110) with a variation of temperature within a guaranteed operating temperature range and the magnitude of variation of said comparison voltage (Vref2) of said voltage-control transistor (132) with a variation of temperature within a guaranteed operating temperature range, is the same as the magnitude of variation of an oscillation-stopping voltage Vsto of said crystal oscillation circuit (10) with a variation of temperature within a guaranteed operating temperature range.
信息查询
0/0