发明公开
EP1686202A4 SINGLE CRYSTAL OF HIGHLY PURIFIED HEXAGONAL BORON NITRIDE CAPABLE OF FAR ULTRAVIOLET HIGH-LUMINANCE LIGHT EMISSION, PROCESS FOR PRODUCING THE SAME, FAR ULTRAVIOLET HIGH-LUMINANCE LIGHT EMITTING DEVICE INCLUDING THE SINGLE CRYSTAL, AND UTILIZING THE DEVICE, SOLID LASER AND SOLID LIGHT EMITTING UNIT
有权
从高度纯化的六方氮化硼REQUIRED TO光发射深紫外高亮度ENABLED单晶IS PROCESS FOR PRODUCING，LIGHT IN深紫外线高亮度发光器件和所述装置的用途，固体激光器和固体发光单元
- 专利标题： SINGLE CRYSTAL OF HIGHLY PURIFIED HEXAGONAL BORON NITRIDE CAPABLE OF FAR ULTRAVIOLET HIGH-LUMINANCE LIGHT EMISSION, PROCESS FOR PRODUCING THE SAME, FAR ULTRAVIOLET HIGH-LUMINANCE LIGHT EMITTING DEVICE INCLUDING THE SINGLE CRYSTAL, AND UTILIZING THE DEVICE, SOLID LASER AND SOLID LIGHT EMITTING UNIT
- 专利标题（中）： 从高度纯化的六方氮化硼REQUIRED TO光发射深紫外高亮度ENABLED单晶IS PROCESS FOR PRODUCING，LIGHT IN深紫外线高亮度发光器件和所述装置的用途，固体激光器和固体发光单元
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申请号： EP04799790申请日： 2004-11-17
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公开(公告)号： EP1686202A4公开(公告)日： 2009-06-10
- 发明人: WATANABE KENJI , TANIGUCHI TAKASHI , KOIZUMI SATOSHI , KANDA HISAO , KATAGIRI MASAYUKI , YAMADA TAKATOSHI , MILOS NESLADEK
- 申请人： NAT INST FOR MATERIALS SCIENCE
- 专利权人： NAT INST FOR MATERIALS SCIENCE
- 当前专利权人： NAT INST FOR MATERIALS SCIENCE
- 优先权： JP2003388467 2003-11-18; JP2004035501 2004-02-12; JP2004260480 2004-09-08
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; B01J3/06 ; C03B9/08 ; C09K11/63 ; H01S5/323
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