发明公开
- 专利标题： Semiconductor power module
- 专利标题（中）： 半导体功率模块
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申请号： EP06002874.3申请日： 2006-02-13
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公开(公告)号： EP1701380A2公开(公告)日： 2006-09-13
- 发明人: Hashimoto, Keita , Suwa, Tokihito , Seto, Sadashi , Shigeta, Satoru , Fujino, Shinichi
- 申请人： HITACHI, LTD.
- 申请人地址： 6-6, Marunouchi 1-chome Chiyoda-ku Tokyo 100-8280 JP
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 当前专利权人地址： 6-6, Marunouchi 1-chome Chiyoda-ku Tokyo 100-8280 JP
- 代理机构： Beetz & Partner
- 优先权： JP2005063638 20050308
- 主分类号： H01L23/373
- IPC分类号： H01L23/373 ; H01L21/48
摘要：
A semiconductor power module has insulative substrate (21) which is configured with a metal wiring pattern (22) formed on an upper first surface thereof, a metal conductor (23) formed on a rear face, opposite the first surface and an insulative layer (21) between the metal wiring pattern and the metal conductor (23). A semiconductor chip (1) is joined to the metal wiring pattern (22) formed on the first surface of the insulative substrate (21), using Pb-free solder with a low melting point. A heat sink (4) is bonded to the metal conductor (23) formed on the other surface of the insulative substrate (21), using a highly heat conductive adhesive (5) having a thermal conductivity of 2 W/(mK) or more.
公开/授权文献
- EP1701380A3 Semiconductor power module 公开/授权日：2008-12-31
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