Disclosed is a fuel cell comprising a substrate (21), a conductive film (22) formed on the substrate (21), a compound semiconductor layer (23) formed on the conductive layer (22) and including a p-type semiconductor crystal containing a group Ib element, a group IIIb element and a group VIb element, an n-type windowed layer (24) formed on the compound semiconductor layer (23) and having an opening (29), and an n-type transparent conductive layer formed on the n-type windowed layer (24) and a part of the compound semiconductor layer (23) under the opening of the n-type windowed layer (24). The compound semiconductor layer (23) has a high resistance portion (23B) containing an n-type impurity which is doped into the p-type semiconductor crystal, and the high resistance portion (23B) is partially formed near a surface of the compound semiconductor layer (23) on the far side from the conductive film (22) in a position under the opening (29) of the n-type windowed layer (24).