Invention Publication
EP1709490A4 DIFFERENTIAL CRITICAL DIMENSION AND OVERLAY METROLOGY APPARATUS AND MEASUREMENT METHOD 有权
装置上,测定关键尺寸和存储差分测量方法

  • Patent Title: DIFFERENTIAL CRITICAL DIMENSION AND OVERLAY METROLOGY APPARATUS AND MEASUREMENT METHOD
  • Patent Title (中): 装置上,测定关键尺寸和存储差分测量方法
  • Application No.: EP03800269
    Application Date: 2003-12-19
  • Publication No.: EP1709490A4
    Publication Date: 2009-03-25
  • Inventor: AUSSCHNITT CHRISTOPHER
  • Applicant: IBM
  • Assignee: IBM
  • Current Assignee: IBM
  • Priority: US0341438 2003-12-19
  • Main IPC: G03F9/00
  • IPC: G03F9/00 B81C99/00 G01B9/00 G03F7/20
DIFFERENTIAL CRITICAL DIMENSION AND OVERLAY METROLOGY APPARATUS AND MEASUREMENT METHOD
Abstract:
A method is described for measuring a dimension on a substrate, wherein a target pattern (455) is provided with a nominal characteristic dimension that repeats at a primary pitch of period P, and has a pre-determined variation orthogonal to the primary direction. The target pattern (455) formed on the substrate is then illuminated so that at least one non-zero diffracted order is detected. The response of the non-zero diffracted order to variation in the printed characteristic dimension relative to nominal is used to determine the dimension of interest, such as critical dimension or overlay, on the substrate. An apparatus (40) for performing the method of the present invention includes an illumination source (410), a detector (460) for detecting a non-zero diffracted order, and means for positioning the source (410) relative to the target (455) so that one or more non-zero diffracted orders from the target (455) are detected at the detector (460).
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