发明公开
- 专利标题： WIDE BANDGAP TRANSISTORS WITH MULTIPLE FIELD PLATES
- 专利标题（中）： 对于有多个场板BIG BAND距离TRANSISTORS
-
申请号： EP05735109.0申请日： 2005-04-14
-
公开(公告)号： EP1751804A2公开(公告)日： 2007-02-14
- 发明人: WU, Yifeng , PARIKH, Primit , MISHRA, Umesh , MOORE, Marcia
- 申请人： CREE, INC.
- 申请人地址： 4600 Silicon Drive Durham, NC 27703 US
- 专利权人： CREE, INC.
- 当前专利权人： CREE, INC.
- 当前专利权人地址： 4600 Silicon Drive Durham, NC 27703 US
- 代理机构： Dawson, Elizabeth Ann
- 优先权： US570518P 20040511; US976422 20041029
- 国际公布： WO2005114743 20051201
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/06
摘要：
A transistor (10) comprises an active region (18) having a channel and source (20) and drain (22) electrodes in contact with the active region. A gate (24, 124,142) is between the source and drain electrodes and on the active region. A plurality of field plates (30,42) is arranged on the active region, each extending toward the drain electrode, and each of which is isolated from the active region and from the others of the field plates. The topmost (42) of the field plates electrically is connected to the source electrode.
公开/授权文献
- EP1751804B1 WIDE BANDGAP TRANSISTORS WITH MULTIPLE FIELD PLATES 公开/授权日：2020-11-18
信息查询
IPC分类:
