发明公开
EP1754810A1 GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE
有权
VERFAHREN ZUR HERSTELLUNG EINES GRUPPE-III-NITRID-HALBLEITERKRISTALLS
- 专利标题： GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE
- 专利标题（中）： VERFAHREN ZUR HERSTELLUNG EINES GRUPPE-III-NITRID-HALBLEITERKRISTALLS
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申请号： EP05727904.4申请日： 2005-03-30
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公开(公告)号： EP1754810A1公开(公告)日： 2007-02-21
- 发明人: SASAKI, Takatomo , MORI, Yusuke , YOSHIMURA, Masashi , KAWAMURA, Fumio , NAKAHATA, Seiji, c/o Itami Works , HIROTA, Ryu, c/o Itami Works
- 申请人： Sumitomo Electric Industries, Ltd. , Mori, Yusuke
- 申请人地址： 5-33 Kitahama 4-chome, Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.,Mori, Yusuke
- 当前专利权人： Sumitomo Electric Industries, Ltd.,Mori, Yusuke
- 当前专利权人地址： 5-33 Kitahama 4-chome, Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权： JP2004148923 20040519
- 国际公布： WO2005111278 20051124
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; C30B11/06 ; H01L21/208 ; H01L33/00 ; H01S5/323
摘要：
A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy (11) containing at least a group III-metal element and an alkali metal element in a reactor (1), introducing a nitrogen-containing substance (14) in the reactor (1), dissolving the nitrogen-containing substance (14) in an alloy melt (13) in which the alloy (11) has been melted, and growing group III-nitride semiconductor crystal (15) is provided. The group III-nitride semiconductor crystal (15) attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
公开/授权文献
- EP1754810B1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL 公开/授权日：2011-05-18
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