发明公开
- 专利标题: METHOD OF FORMING A NANOPOROUS DIELECTRIC FILM
- 专利标题(中): 用于生产纳米多孔介质薄膜
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申请号: EP04754861.5申请日: 2004-06-10
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公开(公告)号: EP1758953A1公开(公告)日: 2007-03-07
- 发明人: NIU, Jason, Q. , HAHNFELD, Jerry, L. , LYONS, John, W. , SEDON, James, H. , SILVIS, Craig, H.
- 申请人: Dow Global Technologies Inc.
- 申请人地址: Washington Street, 1790 Building Midland, MI 48674 US
- 专利权人: Dow Global Technologies Inc.
- 当前专利权人: Dow Global Technologies Inc.
- 当前专利权人地址: Washington Street, 1790 Building Midland, MI 48674 US
- 代理机构: polypatent
- 国际公布: WO2006001790 20060105
- 主分类号: C08J9/26
- IPC分类号: C08J9/26 ; C08L65/00
摘要:
A method comprising forming a coating solution which comprises a matrix precursor material, a porogen material and a solvent, by selecting a polyarylene matrix precursor material which cross-links to form a matrix with a calculated cross-link moeity density of at least 0.003 moles/ml, and reacting the polyarylene matrix precursor material with a porogen which is linear oligomer or polymer which is formed from monomers comprising alkenyl or alkynyl functional monomers, which has reactive end groups and a weight average molecular weight in the range of less than about 5000, where the porogen is present in amounts in the range of about 10 to less than 50 percent by weight based on total weight of porogens and matrix precursor material.
公开/授权文献
- EP1758953B1 METHOD OF FORMING A NANOPOROUS DIELECTRIC FILM 公开/授权日:2011-09-28
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