Disclosed are a nanodot memory formed by applying a metal nanodot colloid solution, which is in a colloidal state, on a semiconductor substrate and thus uniformly arranging nanodot particles with a size of several nanometers on the semiconductor substrate in order to increase the integrity of the memory, and a fabrication method thereof. In the nanodot memory fabrication method, a first insulating film is formed on a surface of a substrate, and a metal nanodot colloid solution is applied on the first insulating film. Subsequently, a solvent inside the metal nanodot colloid solution is evaporated to form a nanodot particles layer, and a second insulating film is formed on the substrate, on the surface of which the nanodot particles are exposed. At this time, the nanodot particles are formed in a monolayer structure by adjusting concentration of metal nanodot particles contained within the metal nanodot colloid solution. By applying a metal nanodot colloid solution on a semiconductor substrate by means of a spin coating method to form monolayer nanodot particles with uniform arrangement, a nanodot memory having a nanodot structure can be easily fabricated.