发明公开
EP1774598A2 CHIP-SCALE METHODS FOR PACKAGING LIGHT EMITTING DEVICES AND CHIP-SCALE PACKAGED LIGHT EMITTING DEVICES
有权
METHOD FOR胶囊的发光器件和密封的发光元件芯片级
- 专利标题: CHIP-SCALE METHODS FOR PACKAGING LIGHT EMITTING DEVICES AND CHIP-SCALE PACKAGED LIGHT EMITTING DEVICES
- 专利标题(中): METHOD FOR胶囊的发光器件和密封的发光元件芯片级
-
申请号: EP05769290.7申请日: 2005-06-30
-
公开(公告)号: EP1774598A2公开(公告)日: 2007-04-18
- 发明人: IBBETSON, James , KELLER, Bernd , PARIKH, Primit
- 申请人: CREE, INC.
- 申请人地址: 4600 Silicon Drive Durham, NC 27703 US
- 专利权人: CREE, INC.
- 当前专利权人: CREE, INC.
- 当前专利权人地址: 4600 Silicon Drive Durham, NC 27703 US
- 代理机构: Bankes, Stephen Charles Digby
- 优先权: US584187P 20040630
- 国际公布: WO2006005062 20060112
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A packaged light emitting device includes a carrier substrate (20) having a top surface and a bottom surface, first and second conductive vias (22S, B) extending from the top surface of the substrate (20) to the bottom surface of the substrate, and a bond pad (24) on the top surface of the substrate in electrical contact with the first conductive via (22A). A diode (16) having first and second electrodes is mounted on the bond pad with the first electrode (26) is in electrical contact with the bond pad (24). A passivation layer (32) is formed on the diode (16), exposing the second electrode of the diode (16). A conductive trace (33) is formed on the top surface of the carrier substrate in electrical contact with the second conductive via (22B) and the second electrode. The conductive trace is on and extends across the passivation layer to contact the second electrode. Methods of packaging light emitting devices include providing an epiwafer including a growth substrate and an epitaxial structure on the growth substrate, bonding a carrier substrate to the epitaxial structure of the epiwafer, forming a plurality of conductive vias through the carrier substrate, defining a plurality of isolated diodes in the epitaxial structure, and electrically connecting at least one conductive via to respective ones of the plurality of isolated diodes.
公开/授权文献
信息查询
IPC分类: