发明授权
EP1775755B1 EUV LIGHT SOURCE, EUV EXPOSURE SYSTEM, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
有权
EUV光源,EUV曝光装置及其制造方法半导体元件
- 专利标题: EUV LIGHT SOURCE, EUV EXPOSURE SYSTEM, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
- 专利标题(中): EUV光源,EUV曝光装置及其制造方法半导体元件
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申请号: EP05755680.5申请日: 2005-06-22
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公开(公告)号: EP1775755B1公开(公告)日: 2012-09-26
- 发明人: SHIRAISHI, Masayuki,
- 申请人: NIKON CORPORATION
- 申请人地址: 12-1, Yurakucho 1-chome Chiyoda-ku Tokyo 100-8331 JP
- 专利权人: NIKON CORPORATION
- 当前专利权人: NIKON CORPORATION
- 当前专利权人地址: 12-1, Yurakucho 1-chome Chiyoda-ku Tokyo 100-8331 JP
- 代理机构: Viering, Jentschura & Partner
- 优先权: JP2004186132 20040624
- 国际公布: WO2006006408 20060119
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; G03F7/20 ; G21K5/02 ; G21K5/08 ; H05G2/00
摘要:
An Sn-Ga type alloy having a composition in which the atomic % of Sn is 15% or less is accommodated inside a heated tank 4. The Sn alloy pressurized by the pressurizing pump is conducted to a nozzle 1, so that a liquid-form Sn alloy is caused to jet from the tip end of this nozzle 1 disposed inside a vacuum chamber 7. The liquid-form Sn alloy that is caused to jet from the nozzle 1 has a spherical shape as a result of surface tension, and forms a target 2. Laser light generated by an Nd:YAG laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and introduced into the vacuum chamber 7. The target 2 that is irradiated by the laser is converted into a plasma, and radiates light that includes EUV light.
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