发明公开
- 专利标题： CVD reactor comprising a gas ring
- 专利标题（中）： CVD-Reaktor mit Gasring
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申请号： EP06119741.4申请日： 2006-08-29
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公开(公告)号： EP1780302A2公开(公告)日： 2007-05-02
- 发明人: Nishikawa, Katsuhito , Moore, Gary M. , Inlges, Aaron David
- 申请人： MOORE EPITAXIAL, INC.
- 申请人地址： 1905 N. MacArthur Drive Tracy, CA 95376-2833 US
- 专利权人： MOORE EPITAXIAL, INC.
- 当前专利权人： MOORE EPITAXIAL, INC.
- 当前专利权人地址： 1905 N. MacArthur Drive Tracy, CA 95376-2833 US
- 代理机构： Gill, David Alan
- 优先权： US254294 20051019
- 主分类号： C23C16/455
- IPC分类号： C23C16/455
摘要：
A process gas is provided to a reactor volume of a semiconductor processing reactor through gas injector ports (120) of a gas ring (106). The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor (108) to exhaust ports (122) of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports (122).
公开/授权文献
- EP1780302A3 CVD reactor comprising a gas ring 公开/授权日：2009-03-11
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