发明授权
- 专利标题： METHOD FOR ALGAN VAPOR-PHASE GROWTH
- 专利标题（中）： ALGAN VAPOR-PHASE GROWTH的方法
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申请号： EP05781000.4申请日： 2005-08-26
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公开(公告)号： EP1796150B1公开(公告)日： 2018-05-16
- 发明人: KOUKITU, Akinori , KUMAGAI, Yoshinao
- 申请人： National University Corporation Tokyo University Of Agriculture and Technology
- 申请人地址： 3-8-1, Harumi-cho, Fuchu-shi, Tokyo 183-8538 JP
- 专利权人： National University Corporation Tokyo University Of Agriculture and Technology
- 当前专利权人： National University Corporation Tokyo University Of Agriculture and Technology
- 当前专利权人地址： 3-8-1, Harumi-cho, Fuchu-shi, Tokyo 183-8538 JP
- 代理机构： TBK
- 优先权： JP2004251810 20040831
- 国际公布： WO2006030617 20060323
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/34
摘要：
An epitaxial growing method in which a crystal of AlxGa1-xN wherein x is a desirable constituent ratio can be grown on an Si substrate or sapphire substrate according to the HVPE process. Crystal of AlxGal-xN is grown according to the HVPE process in which use is made of an aluminum material, a gallium material, an ammonia material and a carrier gas. The carrier gas consists of an inert gas and hydrogen, and the partial pressure of hydrogen is set so as to range from 0 to
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