Solid-state imager with a plurality of pixels formed in a semiconductor substrate (20). Inside a well region (21) of a first conductive type a source (42) and a drain (41) with the opposite type are formed. Between source (42) and drain (41) a barrier region (43) of the first conductive type is formed. Directly underneath the barrier region is a third semiconductor region (44) of the second conductive type to modulate the field distribution inside the well. The accumulated charges in the well can be reset using two additional regions of the first conductive type (54,55).