发明公开
EP1817805A1 VERWENDUNG VON PHENOTHIAZIN-S-OXIDEN UND -S,S-DIOXIDEN ALS MATRIXMATERIALIEN F]R ORGANISCHE LEUCHTDIODEN 审中-公开
吩噻嗪-S氧化物和S的用途,S二氧化物作为基质材料F] [R有机LED

  • 专利标题: VERWENDUNG VON PHENOTHIAZIN-S-OXIDEN UND -S,S-DIOXIDEN ALS MATRIXMATERIALIEN F]R ORGANISCHE LEUCHTDIODEN
  • 专利标题(英): Use of phenothiazine-s-oxides and phenothiazine -s,s-dioxides in the form of matrix materials for organic light-emitting diodes
  • 专利标题(中): 吩噻嗪-S氧化物和S的用途,S二氧化物作为基质材料F] [R有机LED
  • 申请号: EP05808298.3
    申请日: 2005-11-23
  • 公开(公告)号: EP1817805A1
    公开(公告)日: 2007-08-15
  • 发明人: GESSNER, ThomasKOWALSKY, WolfgangSCHILDKNECHT, Christian
  • 申请人: BASF AKTIENGESELLSCHAFT
  • 申请人地址: 67056 Ludwigshafen DE
  • 专利权人: BASF AKTIENGESELLSCHAFT
  • 当前专利权人: BASF AKTIENGESELLSCHAFT
  • 当前专利权人地址: 67056 Ludwigshafen DE
  • 优先权: DE102004057073 20041125
  • 国际公布: WO2006056416 20060601
  • 主分类号: H01L51/30
  • IPC分类号: H01L51/30
VERWENDUNG VON PHENOTHIAZIN-S-OXIDEN UND -S,S-DIOXIDEN ALS MATRIXMATERIALIEN F]R ORGANISCHE LEUCHTDIODEN
摘要:
The invention relates to the use of phenothiazine-S-oxides and phenothiazine-S,S dioxides in the form of matrix materials for organic light-emitting diodes, in particular in the form of matrix materials in the light-emitting layer of the organic light-emitting diodes. The organic light-emitting diodes comprising the organic layer which contains at least one type of phenothiazine-S-oxide or phenothiazine-S,S dioxide in the form of matrix materials and at least one another substance distributed therein in the form of an emitter, the light-emitting layers consisting of one or several types of phenothiazine-S-oxides or phenothiazine-S,S dioxides in the form of the matrix material and at least another substance distributed therein in the form of the emitter, the organic light-emitting diodes comprising corresponding light-emitting layers and devices provided with corresponding organic light emitting diodes are also disclosed.
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