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EP1820887A2 Gallium nitride crystal substrate and method of producing same 审中-公开
Substrat aus Galliumnitridkristall und Verfahren zu seiner Herstellung

Gallium nitride crystal substrate and method of producing same
摘要：
A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm 2 to 10/cm 2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).
摘要（中）：

一种低失真的氮化镓晶体基板，包括具有一定c轴和一定a轴的低位错单晶区域（Z），C平面生长区域（Y）具有平行于 低位错单晶区域（Z）的c轴和a轴，具有与低位错单晶区域（Z）的c轴相反的c轴的大量缺陷累积区域（H） （Z）的平行轴线，以及含有至少一个c轴的晶体的0.1 / cm 2至10 / cm 2 c轴总芯部区域（F），其平行于所述低位错单晶区域 低位错单晶区域（Z）的c轴和与低位错单晶区域（Z）的a轴不同的a轴。

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