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EP1863096A1 Semiconductor device and method of manufacturing the same
有权
Halbleiteranordnung und Verfahren zu deren Herstellung
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： Halbleiteranordnung und Verfahren zu deren Herstellung
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申请号： EP06011118.4申请日： 2006-05-30
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公开(公告)号： EP1863096A1公开(公告)日： 2007-12-05
- 发明人: Shimoida, Yoshio , Hoshi, Masakatsu , Hayashi, Tetsuya , Tanaka, Hideaki
- 申请人： Nissan Motor Company Limited
- 申请人地址： 2 Takara-cho Kanagawa-ku Yokohama-shi, Kanagawa 221-0023 JP
- 专利权人： Nissan Motor Company Limited
- 当前专利权人： Nissan Motor Company Limited
- 当前专利权人地址： 2 Takara-cho Kanagawa-ku Yokohama-shi, Kanagawa 221-0023 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/78 ; H01L29/267 ; H01L29/165 ; H01L21/04 ; H01L29/808 ; H01L29/812 ; H01L29/732 ; H01L29/24 ; H01L29/20 ; H01L29/16
摘要：
A semiconductor device of the invention includes a first conductive type semiconductor base substrate (1,2); and a switching mechanism (6,7,10) which is formed on a first main surface of the semiconductor base substrate and switches ON/OFF a current. In the semiconductor base substrate, a plurality of columnar hetero-semiconductor regions (4) are formed at spaced intervals within the semiconductor substrate, and the hetero-semiconductor regions are made of a semiconductor material having a different band gap from the semiconductor substrate and extend between the first main surface and a second main surface opposite to the first main surface.
公开/授权文献
- EP1863096B1 Semiconductor device and method of manufacturing the same 公开/授权日：2017-07-19
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