发明公开
EP1871928A1 METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTRATES, AND DEVICES BASED THEREON
有权
用于生产III-N层，底物含III-N层和它们的用途在半导体器件中
- 专利标题： METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTRATES, AND DEVICES BASED THEREON
- 专利标题（中）： 用于生产III-N层，底物含III-N层和它们的用途在半导体器件中
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申请号： EP06753501.3申请日： 2006-05-05
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公开(公告)号： EP1871928A1公开(公告)日： 2008-01-02
- 发明人: SCHOLZ, Ferdinand , BRÜCKNER, Peter , HABEL, Frank , PETER, Matthias , KÖHLER, Klaus
- 申请人： Forschungsverbund Berlin e.V. , Osram Opto Semiconductors GmbH , Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- 申请人地址： Rudower Chaussee 17 12489 Berlin DE
- 专利权人： Forschungsverbund Berlin e.V.,Osram Opto Semiconductors GmbH,Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- 当前专利权人： Forschungsverbund Berlin e.V.,Osram Opto Semiconductors GmbH,Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- 当前专利权人地址： Rudower Chaussee 17 12489 Berlin DE
- 代理机构： Oser, Andreas
- 优先权： DE102005021099 20050506
- 国际公布： WO2006119927 20061116
- 主分类号： C30B29/40
- IPC分类号： C30B29/40 ; H01L21/205 ; C30B25/02
摘要：
An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.
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