发明公开
EP1879273A3 Method of manufacturing optical device, and optical device wafer 审中-公开
一种用于制造光学器件晶片和用于光学器件的方法

  • 专利标题: Method of manufacturing optical device, and optical device wafer
  • 专利标题(中): 一种用于制造光学器件晶片和用于光学器件的方法
  • 申请号: EP07013658.5
    申请日: 2007-07-12
  • 公开(公告)号: EP1879273A3
    公开(公告)日: 2009-04-29
  • 发明人: Imai, Yasutaka
  • 申请人: Seiko Epson Corporation
  • 申请人地址: 4-1, Nishi-shinjuku 2-chome Shinjuku-ku Tokyo 163-0811 JP
  • 专利权人: Seiko Epson Corporation
  • 当前专利权人: Seiko Epson Corporation
  • 当前专利权人地址: 4-1, Nishi-shinjuku 2-chome Shinjuku-ku Tokyo 163-0811 JP
  • 代理机构: Hoffmann, Eckart
  • 优先权: JP2006194188 20060714; JP2007106844 20070416
  • 主分类号: H01S5/183
  • IPC分类号: H01S5/183 H01S5/026
Method of manufacturing optical device, and optical device wafer
摘要:
A method of manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror (102) above a substrate (101), forming an active layer (103) above the first mirror (102), forming a second mirror (104) above the active layer (103), forming a semiconductor layer (122) on the second mirror (104), and forming a sacrificial layer on the semiconductor layer (122); conducting a first examination step of conducting a reflectance examination on the first multilayer film; forming a second multilayer film by removing the sacrificial layer from the first multilayer film; conducting a second examination step of conducting a reflectance examination on the second multilayer film; and patterning the second multilayer film to form a surface-emitting laser section (140) having the first mirror (102), the active layer (103) and the second mirror (104), and a diode section (120) having the semiconductor layer (122), wherein the sacrificial layer is formed to have an optical film thickness of an odd multiple of λ / 4, where λ is a design wavelength of light emitted by the surface-emitting laser section (140).
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