发明授权
- 专利标题： Solar cell structure with localized doping of cap layer
- 专利标题（中）： 局部掺杂帽层的太阳能电池结构
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申请号： EP07016452.0申请日： 2007-08-22
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公开(公告)号： EP1914808B1公开(公告)日： 2018-04-04
- 发明人: Cornfeld, Arthur , Stan, Mark A. , Sharps, Paul R.
- 申请人： SolAero Technologies Corp.
- 申请人地址： 10420 Research Road SE Albuquerque, NM 87123 US
- 专利权人： SolAero Technologies Corp.
- 当前专利权人： SolAero Technologies Corp.
- 当前专利权人地址： 10420 Research Road SE Albuquerque, NM 87123 US
- 代理机构： Wagner, Karl H.
- 优先权： US550881 20061019
- 主分类号： H01L31/068
- IPC分类号： H01L31/068 ; H01L27/142 ; H01L31/0304
摘要：
A solar cell includes a semiconductor substrate and a sequence of semiconductor layers disposed over the substrate including a window layer. The solar cell also includes a semiconductor silicon-containing cap layer over the window layer. The cap layer is spatially separated from the window layer by a semiconductor barrier layer that either includes no silicon or has a silicon concentration that is significantly lower than the silicon concentration of the cap layer.
公开/授权文献
- EP1914808A3 Solar cell structure with localized doping of cap layer 公开/授权日：2013-12-25
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