发明公开
EP1922766A1 III-NITRIDE LIGHT-EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT-EMITTING REGION
有权
枸杞子三氮UNG UNG UNG UNG UNG UNG UNG UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR
- 专利标题： III-NITRIDE LIGHT-EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT-EMITTING REGION
- 专利标题（中）： 枸杞子三氮UNG UNG UNG UNG UNG UNG UNG UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR
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申请号： EP06795665.6申请日： 2006-08-16
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公开(公告)号： EP1922766A1公开(公告)日： 2008-05-21
- 发明人: SHEN, Yu-Chen , GARDNER, Nathan, F. , WATANABE, Satoshi , KRAMES, Michael, R. , MUELLER, Gerd, O.
- 申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company, LLC.
- 申请人地址： Groenewoudseweg 1 5621 BA Eindhoven NL
- 专利权人： Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company, LLC.
- 当前专利权人： Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company, LLC.
- 当前专利权人地址： Groenewoudseweg 1 5621 BA Eindhoven NL
- 代理机构： Bekkers, Joost J.J
- 优先权： US211921 20050824
- 国际公布： WO2007023419 20070301
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A Ill-nitride light emitting layer is disposed between an n-type region and a p- type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.
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