发明公开
- 专利标题： VERFAHREN UND VORRICHTUNG ZUR BEARBEITUNG VON SUBSTRATEN MIT LASERGESCHRIEBENEN GRABENKONTAKTEN, INSBESONDERE SOLARZELLEN
- 专利标题（英）： Method and apparatus for processing of substrates having laser-written trench contacts, in particular solar cells
- 专利标题（中）： 一种用于处理太阳能电池激光书写的抓斗联系
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申请号： EP06792050.4申请日： 2006-09-14
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公开(公告)号： EP1927139A1公开(公告)日： 2008-06-04
- 发明人: SCHMID, Christian
- 申请人： Gebr. Schmid GmbH + Co.
- 申请人地址： Robert-Bosch-Strasse 32-34 72250 Freudenstadt DE
- 专利权人： Gebr. Schmid GmbH + Co.
- 当前专利权人： Gebr. Schmid GmbH + Co.
- 当前专利权人地址： Robert-Bosch-Strasse 32-34 72250 Freudenstadt DE
- 代理机构： Patentanwälte Ruff, Wilhelm, Beier, Dauster & Partner
- 优先权： DE102005045704 20050919
- 国际公布： WO2007033788 20070329
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/0216 ; H01L27/142
摘要：
In order to process a silicon wafer for a solar cell (11), an anti-reflective coating (15) on an active silicon layer (13) can be provided with trenches (22), for example by means of a laser (20a). The possibility of damage to the upper face (14) of the active layer (13) by the laser (20a) can be avoided by introducing a contact and doping material (30) into the trench (22). This material contains nickel for the contact function and phosphorus for the doping function. Heating of the contact and doping material (30), for example by means of a second laser (20b), results in doping of the adjacent area (25) of the active layer (13). This can thus be repaired and, in addition, a very low contact resistance can be produced to the finished contact (30’).
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