发明公开
EP1928011A3 Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium
审中-公开
用于电容器电极的制造方法，对于一个电容器电极和存储介质制造系统
- 专利标题： Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium
- 专利标题（中）： 用于电容器电极的制造方法，对于一个电容器电极和存储介质制造系统
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申请号： EP07023122.0申请日： 2007-11-29
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公开(公告)号： EP1928011A3公开(公告)日： 2011-08-03
- 发明人: Nishimura, Eiichi
- 申请人： Tokyo Electron Limited (TEL)
- 申请人地址： 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 专利权人： Tokyo Electron Limited (TEL)
- 当前专利权人： Tokyo Electron Limited (TEL)
- 当前专利权人地址： 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2006321680 20061129
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/311
摘要：
A method for manufacturing a capacitor electrode by removing a silicon oxide film on a surface of a substrate, including: transforming the silicon oxide film into a reaction product by supplying a gas containing a halogen element to chemically react with the silicon oxide film while controlling temperature of the substrate to a first process temperature; and removing the silicon oxide film transformed to the reaction product while controlling the temperature of the substrate to a second process temperature higher than the first process temperature. The silicon oxide film is a BPSG film.
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