发明公开
EP1966847A2 METHODS FOR ORIENTED GROWTH OF NANOWIRES ON PATTERNED SUBSTRATES
有权
的方法，来EYED SUBSTRATES纳米线定向生长
- 专利标题： METHODS FOR ORIENTED GROWTH OF NANOWIRES ON PATTERNED SUBSTRATES
- 专利标题（中）： 的方法，来EYED SUBSTRATES纳米线定向生长
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申请号： EP06851310.0申请日： 2006-12-20
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公开(公告)号： EP1966847A2公开(公告)日： 2008-09-10
- 发明人: ROBBINS, Virginia
- 申请人： Nanosys, Inc.
- 申请人地址： 2625 Hanover Street Palo Alto, CA 94304 US
- 专利权人： Nanosys, Inc.
- 当前专利权人： Nanosys, Inc.
- 当前专利权人地址： 2625 Hanover Street Palo Alto, CA 94304 US
- 代理机构： Martin, Philip John
- 优先权： US754519P 20051229
- 国际公布： WO2007133271 20071122
- 主分类号： H01M8/04
- IPC分类号： H01M8/04 ; H01M8/24
摘要：
Systems and methods for nanowire growth, doping and harvesting are provided, including methods for epitaxial oriented naπowire growth using a combination of silicon precursors, as well as use of patterned substrates to grow oriented nanowires. Improvements in nanowire quality are made through the use of sacrificial growth layers. Methods for transferring nanowires from one substrate to another substrate are also provided.
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