发明公开
- 专利标题: SILICON CARBIDE BIPOLAR SEMICONDUCTOR DEVICE
- 专利标题(中): 碳化硅双极型半导体器件
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申请号: EP06834573.5申请日: 2006-12-13
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公开(公告)号: EP1973165A1公开(公告)日: 2008-09-24
- 发明人: ISHII, Ryosuke , NAKAYAMA, Koji , SUGAWARA, Yoshitaka , MIYANAGI, Toshiyuki , TSUCHIDA, Hidekazu , KAMATA, Isaho , NAKAMURA, Tomonori
- 申请人: THE KANSAI ELECTRIC POWER CO., INC. , Central Research Institute of Electric Power Industry
- 申请人地址: 6-16 Nakanoshima 3-chome, Kita-ku Osaka-shi, Osaka 530-8270 JP
- 专利权人: THE KANSAI ELECTRIC POWER CO., INC.,Central Research Institute of Electric Power Industry
- 当前专利权人: THE KANSAI ELECTRIC POWER CO., INC.,Central Research Institute of Electric Power Industry
- 当前专利权人地址: 6-16 Nakanoshima 3-chome, Kita-ku Osaka-shi, Osaka 530-8270 JP
- 代理机构: Hall, Matthew Benjamin
- 优先权: JP2005360245 20051214
- 国际公布: WO2007069632 20070621
- 主分类号: H01L29/861
- IPC分类号: H01L29/861 ; H01L21/28 ; H01L29/06 ; H01L29/417
摘要:
In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.
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