发明公开
- 专利标题： Methods for stripping material for wafer reclamation
- 专利标题（中）： 一种用于剥离材料到晶片回收方法
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申请号： EP08103209.6申请日： 2008-03-31
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公开(公告)号： EP1975987A3公开(公告)日： 2011-03-09
- 发明人: Visintin, Pamela M. , Jiang, Ping , Korzenski, Michael B. , King, Mackenzie , Fletcher, Kristin A. , Minsek, David W.
- 申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
- 申请人地址： 7 Commerce Drive Danbury, CT 06810 US
- 专利权人： ADVANCED TECHNOLOGY MATERIALS, INC.
- 当前专利权人： ADVANCED TECHNOLOGY MATERIALS, INC.
- 当前专利权人地址： 7 Commerce Drive Danbury, CT 06810 US
- 代理机构： ABG Patentes, S.L.
- 优先权： US909428P 20070331; US943736P 20070613
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/311 ; H01L21/3213
摘要：
Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure.
公开/授权文献
- EP1975987A2 Methods for stripping material for wafer reclamation 公开/授权日：2008-10-01
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