发明授权
EP1980652B1 Multilayer nanocrystal structure and method for producing the same
有权
一种多层纳米晶体的结构和它们的制备方法
- 专利标题: Multilayer nanocrystal structure and method for producing the same
- 专利标题(中): 一种多层纳米晶体的结构和它们的制备方法
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申请号: EP08150383.1申请日: 2008-01-17
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公开(公告)号: EP1980652B1公开(公告)日: 2017-03-15
- 发明人: Jang, Eun Joo Samsung Advanced Inst. of Techn. Mt. , Jun, Shin Ae Samsung Advanced Inst. of Techn. Mt. , Lim, Jung Eun Samsung Advanced Inst. of Techn. Mt. , Choi, Hye Ran Samsung Advanced Inst. of Techn. Mt.
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: 129, Samsung-ro Yeongtong-gu Suwon-si, Gyeonggi-do, 443-742 KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: 129, Samsung-ro Yeongtong-gu Suwon-si, Gyeonggi-do, 443-742 KR
- 代理机构: Zijlstra, Robert Wiebo Johan
- 优先权: KR20070029183 20070326
- 主分类号: C30B7/14
- IPC分类号: C30B7/14 ; C30B29/40 ; C30B29/48 ; C30B29/60 ; C30B33/02 ; C30B33/04
摘要:
Disclosed herein is a multilayer nanocrystal structure (300) comprising a nanocrystal alloy core (100) comprising two or more nanocrystals (10,50) and including an alloy interlayer (30) formed at an interface between the two or more nanocrystals (10,50), and one or more layers of nanocrystal shells (110,120) formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells (110,120) each have different band gaps. The multilayer nanocrystal structure (300) can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.
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