发明公开
- 专利标题： PROCESS FOR FORMING A SHORT CHANNEL TRENCH MOSFET AND DEVICE
- 专利标题（中）： 制法将一个带有导管短沟道MOSFET和设备
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申请号： EP07751767申请日： 2007-02-23
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公开(公告)号： EP1989728A4公开(公告)日： 2011-06-01
- 发明人: PATTANAYAK DEVA , LEE ZACHARY
- 申请人： VISHAY SILICONIX
- 专利权人： VISHAY SILICONIX
- 当前专利权人： VISHAY SILICONIX
- 优先权： US77677106 2006-02-23; US71004107 2007-02-23
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/76 ; H01L29/78
摘要：
A process for forming a short channel trench MOSFET. The process includes forming a first implant at the bottom of a trench that is formed in the body of the trench MOSFET and forming a second or angled implant that is tilted in its orientation and directed perpendicular to the trench that is formed in the body of the trench MOSFET. The second implant is adjusted so that it does not reach the bottom of the trench. In one embodiment the angled implant is n-type material.
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