发明公开
EP1991499A1 METHOD FOR METAL-FREE SYNTHESIS OF EPITAXIAL SEMICONDUCTOR NANOWIRES ON SI
审中-公开
方法外延半导体纳米线在Si的无金属合成
- 专利标题: METHOD FOR METAL-FREE SYNTHESIS OF EPITAXIAL SEMICONDUCTOR NANOWIRES ON SI
- 专利标题(中): 方法外延半导体纳米线在Si的无金属合成
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申请号: EP07716104.0申请日: 2007-03-07
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公开(公告)号: EP1991499A1公开(公告)日: 2008-11-19
- 发明人: SAMUELSON, Lars , MÅRTENSSON, Thomas , SEIFERT, Werner , MIKKELSEN, Anders , MANDL, Bernhard
- 申请人: QuNano AB , Mandl, Bernhard
- 申请人地址: Ideon Science Park 223 70 Lund SE
- 专利权人: QuNano AB,Mandl, Bernhard
- 当前专利权人: QuNano AB,Mandl, Bernhard
- 当前专利权人地址: Ideon Science Park 223 70 Lund SE
- 代理机构: Franks, Barry Gerard
- 优先权: SE0600533 20060308; SE0601142 20060522
- 国际公布: WO2007102781 20070913
- 主分类号: B82B3/00
- IPC分类号: B82B3/00 ; C30B25/10 ; H01L29/06
摘要:
The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.
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