发明公开
EP1991499A1 METHOD FOR METAL-FREE SYNTHESIS OF EPITAXIAL SEMICONDUCTOR NANOWIRES ON SI 审中-公开
方法外延半导体纳米线在Si的无金属合成

METHOD FOR METAL-FREE SYNTHESIS OF EPITAXIAL SEMICONDUCTOR NANOWIRES ON SI
摘要:
The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.
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