发明公开
EP2001273A2 Method for producing conductor structures and applications thereof
有权
Verfahren zur Herstellung von Leiterstrukturen und Anwendung
- 专利标题: Method for producing conductor structures and applications thereof
- 专利标题(中): Verfahren zur Herstellung von Leiterstrukturen und Anwendung
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申请号: EP08157722.3申请日: 2008-06-06
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公开(公告)号: EP2001273A2公开(公告)日: 2008-12-10
- 发明人: Mattila, Tomi , Alastalo, Ari , Allen, Mark , Seppä, Heikki
- 申请人: Valtion Teknillinen Tutkimuskeskus
- 申请人地址: Vuorimiehentie 3, 02150 Espoo FI
- 专利权人: Valtion Teknillinen Tutkimuskeskus
- 当前专利权人: Valtion Teknillinen Tutkimuskeskus
- 当前专利权人地址: Vuorimiehentie 3, 02150 Espoo FI
- 代理机构: Lipsanen, Jari Seppo Einari
- 优先权: FI20075430 20070608
- 主分类号: H05K3/10
- IPC分类号: H05K3/10
摘要:
This publication discloses a method for forming electrically conducting structures (102) on a substrate (100). According to the method nanoparticles (101) containing conducting or semiconducting material are applied on the substrate (100) in a dense formation and a voltage is applied over the nanoparticles so as to at least locally increase the conductivity of the formation. According to the invention, the voltage is high enough to cause melting of the nanoparticles in a breakthrough-like manner. With the aid of the invention, small-linewidth structures can be created without high-precision lithography.
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