发明公开
EP2003687A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
审中-公开
HERBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： HERBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
-
申请号： EP07739885.7申请日： 2007-03-27
-
公开(公告)号： EP2003687A1公开(公告)日： 2008-12-17
- 发明人: KIKUCHI, Yoshiyuki
- 申请人： Tokyo Electron Limited (TEL)
- 申请人地址： 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 专利权人： Tokyo Electron Limited (TEL)
- 当前专利权人： Tokyo Electron Limited (TEL)
- 当前专利权人地址： 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 代理机构： Goddar, Heinz J.
- 优先权： JP2006099770 20060331
- 国际公布： WO2007116758 20071018
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/314 ; H01L23/522
摘要：
The present invention is a semiconductor device characterized by including a substrate, an insulating film consisting of a fluorine added carbon film formed on the substrate, a barrier layer consisting of a silicon nitride film and a film containing silicon, carbon, and nitride formed on the insulating film, and a hard mask layer having a film containing silicon and oxygen formed on the barrier layer, wherein the barrier layer consists of a silicon nitride film and a film containing silicon, carbon, and nitride that are laminated from the bottom in that order, and functions to prevent the fluorine in the fluorine added carbon film from moving to the hard mask layer.
信息查询
IPC分类:
