A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film (110) on at least one end surface of an optical resonator (300), in which the dielectric film includes a first dielectric layer (111) and a second dielectric layer (112) comprised of the same elements and disposed in sequence from the end surface side of the semiconductor, the first dielectric layer including a layer made of a single crystal material and the second dielectric layer including a layer made of an amorphous material.