发明公开
EP2086974A2 DIIMIDE-BASED SEMICONDUCTOR MATERIALS AND METHODS OF PREPARING AND USING THE SAME
有权
ON DIIMIDBASIS半导体材料和方法为他们的应用
- 专利标题： DIIMIDE-BASED SEMICONDUCTOR MATERIALS AND METHODS OF PREPARING AND USING THE SAME
- 专利标题（中）： ON DIIMIDBASIS半导体材料和方法为他们的应用
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申请号： EP07862121.6申请日： 2007-11-19
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公开(公告)号： EP2086974A2公开(公告)日： 2009-08-12
- 发明人: FACCHETTI, Antonio , MARKS, Tobin J. , YAN, He
- 申请人： Polyera Corporation
- 申请人地址： 8025 Lamon Avenue Suite 130 Skokie, IL 60077 US
- 专利权人： Polyera Corporation
- 当前专利权人： Polyera Corporation
- 当前专利权人地址： 8025 Lamon Avenue Suite 130 Skokie, IL 60077 US
- 代理机构： D'Arcy, Julia
- 优先权： US859761P 20061117
- 国际公布： WO2008063609 20080529
- 主分类号： C07D471/04
- IPC分类号： C07D471/04 ; C07D487/04 ; A61K31/473 ; A61K31/4035 ; H01L51/00
摘要：
Diimide-based semiconductorimaterials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided. Of formula I wherein : Q is a fused ring moiety optionally substituted with 1-4 Ra groups; specially Q is :
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