An interconnect structure having improved electromigration (EM) reliability is provided. The inventive interconnect structure avoids a circuit dead opening that is caused by EM failure by incorporating a EM preventing liner (66) at least partially within a metal interconnect. In one embodiment, a 'U-shaped' EM preventing liner (66) is provided that abuts a diffusion barrier that separates conductive material (64, 68) from the dielectric material (54B). In another embodiment, a space is located between the 'U-shaped' EM preventing liner and the diffusion barrier. In yet another embodiment, a horizontal EM liner that abuts the diffusion barrier is provided. In yet a further embodiment, a space exists between the horizontal EM liner and the diffusion barrier.