发明公开
EP2102904A2 PROCEDE DE FABRICATION DE COUCHES MINCES DE GAN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
有权
VERFAHREN ZUR HERSTELLUNGDÜNERGAN-SCHICHTEN DURCH植物园在回收的EINES STARTSUBSTRATS
- 专利标题： PROCEDE DE FABRICATION DE COUCHES MINCES DE GAN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
- 专利标题（英）： Method for preparing thin gan layers by implantation and recycling of a starting substrate
- 专利标题（中）： VERFAHREN ZUR HERSTELLUNGDÜNERGAN-SCHICHTEN DURCH植物园在回收的EINES STARTSUBSTRATS
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申请号： EP07872387.1申请日： 2007-12-18
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公开(公告)号： EP2102904A2公开(公告)日： 2009-09-23
- 发明人: TAUZIN, Aurélie , DECHAMP, Jérôme , MAZEN, Frédéric , MADEIRA, Florence
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 申请人地址： 25, rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人地址： 25, rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 代理机构： Quantin, Bruno Marie Henri
- 优先权： FR0655664 20061219
- 国际公布： WO2008093008 20080807
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
The invention relates to a method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate is made of GaN, said method including the following steps: bombarding said free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of said thick surface area and the hydrogen being implanted thereafter, the helium and hydrogen doses each varying between 1.1017 atoms/cm2 and 4.1017 atoms/cm2; submitting the starting substrate to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.
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