发明公开
- 专利标题： TRENCH ISOLATION FOR REDUCED CROSS TALK
- 专利标题（中）： GRUENISOLATIONFÜRREDUZIERTESÜBERSPRECHEN
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申请号： EP08705364.1申请日： 2008-01-25
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公开(公告)号： EP2106617A1公开(公告)日： 2009-10-07
- 发明人: EBEFORS, Thorbjörn , BAUER, Tomas
- 申请人： Silex Microsystems AB
- 申请人地址： P O Box 595 175 26 Järfälla SE
- 专利权人： Silex Microsystems AB
- 当前专利权人： Silex Microsystems AB
- 当前专利权人地址： P O Box 595 175 26 Järfälla SE
- 代理机构： Lindgren, Anders
- 优先权： SE0700172 20070125
- 国际公布： WO2008091220 20080731
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/762 ; H01L25/04 ; H01L27/04
摘要：
A starting substrate in the form of a semiconductor wafer (1) has a first side and a second side, the sides being plane-parallel with respect to each other, and has a thickness rendering it suitable for processing without significant risk of being damaged, for the fabrication of combined analogue and digital designs, the wafer including at least two partitions (A1, A2; DIGITAL, ANALOGUE) electrically insulated from each other by insulating material (2; 38; 81; L) extending entirely through the wafer. A method for making such substrates including etching trenches in a wafer, and filling trenches with insulating material is also described.
公开/授权文献
- EP2106617B1 TRENCH ISOLATION FOR REDUCED CROSS TALK 公开/授权日：2021-06-02
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