发明公开
EP2110855A1 THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD
审中-公开
VERFAHREN ZU SEINER HERSTELLUNG的DÜNNFILM-TRANSISTOR
- 专利标题： THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD
- 专利标题（中）： VERFAHREN ZU SEINER HERSTELLUNG的DÜNNFILM-TRANSISTOR
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申请号： EP08704196.8申请日： 2008-01-30
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公开(公告)号： EP2110855A1公开(公告)日： 2009-10-21
- 发明人: SHIINO, Osamu , IWABUCHI, Yoshinori , SAKURAI, Ryo , FUNAKI, Tatsuya
- 申请人： Bridgestone Corporation
- 申请人地址： 10-1, Kyobashi 1-chome Chuo-ku Tokyo 104-8340 JP
- 专利权人： Bridgestone Corporation
- 当前专利权人： Bridgestone Corporation
- 当前专利权人地址： 10-1, Kyobashi 1-chome Chuo-ku Tokyo 104-8340 JP
- 代理机构： Whalley, Kevin
- 优先权： JP2007023767 20070202
- 国际公布： WO2008093741 20080807
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/28 ; H01L21/285 ; H01L21/336
摘要：
In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.
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