发明公开
- 专利标题: ULTRA LOW NOISE CMOS IMAGER
- 专利标题(中): 超低噪声CMOS图像传感器
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申请号: EP07843162.4申请日: 2007-09-25
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公开(公告)号: EP2135443A1公开(公告)日: 2009-12-23
- 发明人: ATLAS, Eugene , NETER, Sarit , JOHNSON, Kim Loren
- 申请人: Imagerlabs, Inc.
- 申请人地址: 1995 South Myrtle Monrovia, CA 91016 US
- 专利权人: Imagerlabs, Inc.
- 当前专利权人: Imagerlabs, Inc.
- 当前专利权人地址: 1995 South Myrtle Monrovia, CA 91016 US
- 代理机构: Freeman, Jacqueline Carol
- 优先权: US683868 20070308
- 国际公布: WO2008108884 20080912
- 主分类号: H04N5/30
- IPC分类号: H04N5/30
摘要:
A column buffer for use with a pixel cell array includes an amplifier coupled to three read-out circuits in parallel providing a signal corresponding to accumulated photon-generated charge in a pixel cell plus noise, a reset level plus noise, and a pedestal level, respectively. These three signals are used to generate an ultra-low noise signal Di = Si - Pi-1 - G*(Ri - Ri-1), wherein S is the sampled signal, P is the pedestal level, R is the reset level, and G is a gain associated with a pixel cell, and wherein i is a frame number greater than 0. The three signals can be read-out simultaneously. In another embodiment, the three signals are obtained from a column buffer having only one output. In this case, the signals are read-out sequentially.
公开/授权文献
- EP2135443B1 ULTRA LOW NOISE CMOS IMAGER 公开/授权日:2018-06-27
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