发明公开
EP2158461A2 ELECTRIC-FIELD-ENHANCEMENT STRUCTURE AND DETECTION APPARATUS USING SAME
审中-公开
结构用于电场的膨胀和检测设备
- 专利标题: ELECTRIC-FIELD-ENHANCEMENT STRUCTURE AND DETECTION APPARATUS USING SAME
- 专利标题(中): 结构用于电场的膨胀和检测设备
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申请号: EP08779774.2申请日: 2008-06-25
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公开(公告)号: EP2158461A2公开(公告)日: 2010-03-03
- 发明人: FATTAL, David , LI, Zhiyong , TONG, William , STEWART, Duncan , BLACXSTOCK, Jason
- 申请人: Hewlett-Packard Development Company, L. P.
- 申请人地址: 11445 Compaq Center Drive West Houston, TX 77070 US
- 专利权人: Hewlett-Packard Development Company, L. P.
- 当前专利权人: Hewlett-Packard Development Company, L. P.
- 当前专利权人地址: 11445 Compaq Center Drive West Houston, TX 77070 US
- 代理机构: Zimmermann, Tankred Klaus
- 优先权: US823281 20070626
- 国际公布: WO2009002524 20081231
- 主分类号: G01J3/44
- IPC分类号: G01J3/44 ; G01J4/00
摘要:
Various aspects of the prsent invention are directed to electric-field-enhancement structures (100) and detection apparatuses (600, 700, 800) that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure (100) includes a substrate (102) having a surface (104). The substrate (102) is capable of supporting a planar mode (114) having a planar-mode frequency. A plurality of nanofeatures (106) is associated with the surface (104), and each of nanofeatures (106) exhibits a localized-surface-plasmon mode (116) having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.
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