发明公开
- 专利标题： Photoelectric Conversion Device
- 专利标题（中）： 的光电转换装置
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申请号： EP09168985.1申请日： 2009-08-31
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公开(公告)号： EP2161760A3公开(公告)日： 2015-09-16
- 发明人: Arai, Yasuyuki
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： 398, Hase Atsugi-shi, Kanagawa 243-0036 JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： 398, Hase Atsugi-shi, Kanagawa 243-0036 JP
- 代理机构： Grünecker Patent- und Rechtsanwälte PartG mbB
- 优先权： JP2008229103 20080905
- 主分类号： H01L31/05
- IPC分类号： H01L31/05 ; H01L25/04
摘要：
An object of the present invention is to provide a simple process to manufacture a wiring connecting photoelectric cells in a photoelectric conversion device. Another object of this invention is to prevent defective rupture from occurring in the said wiring. The photoelectric conversion device comprises a first and a second photoelectric conversion cells comprising respectively a first and a second single crystal semiconductor layers. First electrodes are provided on the downwards surfaces of the first and second photoelectric conversion cells, and second electrodes are provided on their upwards surfaces. The first and second photoelectric conversion cells are fixed onto a support substrate side by side. The second single crystal semiconductor layer has a through hole which reaches the first electrode. The second electrode of the first photoelectric conversion cell is extended to the through hole to be electrically connected to the first electrode of the second photoelectric conversion cell.
公开/授权文献
- EP2161760B1 Photoelectric Conversion Device 公开/授权日：2017-04-12
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