发明公开
- 专利标题: PROCEDE DE REALISATION DE VIA DANS UN SUBSTRAT RECONSTITUE
- 专利标题(英): Method of producing a via in a reconstituted substrate
- 专利标题(中): 用于生产通道内将复原底
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申请号: EP08760580.4申请日: 2008-06-05
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公开(公告)号: EP2162915A1公开(公告)日: 2010-03-17
- 发明人: BALERAS, François , SOURIAU, Jean-Charles , HENRY, David
- 申请人: Commissariat à l'Energie Atomique
- 申请人地址: 25, rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 专利权人: Commissariat à l'Energie Atomique
- 当前专利权人: Commissariat à l'Energie Atomique
- 当前专利权人地址: 25, rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 代理机构: Ilgart, Jean-Christophe
- 优先权: FR0755577 20070607
- 国际公布: WO2008155233 20081224
- 主分类号: H01L25/10
- IPC分类号: H01L25/10 ; H01L23/538 ; H01L21/56
摘要:
The invention relates to a method of producing an electronic connection device (100), comprising: a) the formation, in the plane of a support substrate (2), of at least one first contact element (10, 34) and, in a direction approximately perpendicular to said plane, of at least one second contact element (4, 36) having a first end in electrical contact with the first contact element or elements and a second end, the second contact element or elements having one or more metal tracks (36) standing up along said direction perpendicular to the surface of the substrate; b) then the positioning of at least one electrical or electronic component (22) in contact with the first contact element or elements (10, 34); and c) the encapsulation of the component(s) and of the first and second contact elements, at least the second end or ends of the second contact element or elements (4, 36) being flush with the surface (27) of the encapsulating material.
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