发明公开
- 专利标题： Magnetoresistance effect device and method of production of the same
- 专利标题（中）： 磁阻效应器件及其制造方法
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申请号： EP10150310.0申请日： 2005-09-05
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公开(公告)号： EP2166581A8公开(公告)日： 2010-08-11
- 发明人: Djayaprawira, David D , Tsunekawa, Koji , Nagai, Motonobu , Maehara, Hiroki , Yamagata, Shinji , Watanabe, Naoki , Yuasa, Shinji
- 申请人： Canon Anelva Corporation , National Institute of Advanced Industrial Science and Technology
- 申请人地址： 5-1 Kurigi 2-chome Asao-ku Kawasaki-shi Kanagawa 210-8550 JP
- 专利权人： Canon Anelva Corporation,National Institute of Advanced Industrial Science and Technology
- 当前专利权人： Canon Anelva Corporation,National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： 5-1 Kurigi 2-chome Asao-ku Kawasaki-shi Kanagawa 210-8550 JP
- 代理机构： Hatzmann, Martin
- 优先权： JP2004259280 20040907
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L43/12 ; C23C14/08 ; C23C14/34 ; G11C11/16 ; H01F10/32 ; H01F10/30
摘要：
A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.
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