发明公开
- 专利标题： Method for manufacturing a junction
- 专利标题（中）： HerstellungsverfahrenfüreinenÜbergang
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申请号： EP09180038.3申请日： 2009-12-18
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公开(公告)号： EP2202784A2公开(公告)日： 2010-06-30
- 发明人: Nguyen, Ngoc Duy , Loo, Roger , Caymax, Matty
- 申请人： IMEC
- 申请人地址： Kapeldreef 75 3001 Leuven BE
- 专利权人： IMEC
- 当前专利权人： IMEC
- 当前专利权人地址： Kapeldreef 75 3001 Leuven BE
- 代理机构： pronovem
- 优先权： US141197P 20081229
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/02
摘要：
The present invention relates to a method for manufacturing a junction with a controlled dopant (concentration) profile comprising (or consisting of) the steps of:
- forming a first semiconductor material comprising a first dopant having a first concentration and thereupon
- forming a second semiconductor material comprising a second dopant, having a second concentration thereby forming a junction, and
- depositing by Atomic Layer Epitaxy or Vapor Phase Doping at least a fraction of a monolayer of a precursor suitable to form the second dopant on the first semiconductor material, prior to forming the second semiconductor material, thereby increasing the second concentration of the second dopant at the junction.
- forming a first semiconductor material comprising a first dopant having a first concentration and thereupon
- forming a second semiconductor material comprising a second dopant, having a second concentration thereby forming a junction, and
- depositing by Atomic Layer Epitaxy or Vapor Phase Doping at least a fraction of a monolayer of a precursor suitable to form the second dopant on the first semiconductor material, prior to forming the second semiconductor material, thereby increasing the second concentration of the second dopant at the junction.
公开/授权文献
- EP2202784B1 Method for manufacturing a junction 公开/授权日：2017-10-25
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