发明公开
EP2219230A3 Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
审中-公开
一种用于通过感应耦合等离子生成使用沉积从气相的太阳能电池的过程
- 专利标题： Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
- 专利标题（中）： 一种用于通过感应耦合等离子生成使用沉积从气相的太阳能电池的过程
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申请号： EP09173987.0申请日： 2009-10-23
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公开(公告)号： EP2219230A3公开(公告)日： 2014-12-31
- 发明人: Jeong, Chaehwan , Lee, Jong Ho , Kim, Ho-Sung , Boo, Seongjae
- 申请人： Korean Institute of Industrial Technology
- 申请人地址： 35-3, Hongcheon-ri Ipjang-myeon Seobuk-gu Cheonan-si Chungcheongnam-do 331-825 KR
- 专利权人： Korean Institute of Industrial Technology
- 当前专利权人： Korean Institute of Industrial Technology
- 当前专利权人地址： 35-3, Hongcheon-ri Ipjang-myeon Seobuk-gu Cheonan-si Chungcheongnam-do 331-825 KR
- 代理机构： Hirsch & Associés
- 优先权： KR20090013059 20090217; KR20090013195 20090218; KR20090013204 20090218; KR20090101304 20091023
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/075 ; H01L31/20 ; H01L31/0368 ; H01L31/0376 ; H01L31/0392 ; C23C16/507 ; C23C16/24 ; H01L21/205
摘要：
A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H 2 ) gas and silane (SiH 4 ) gas. In the mixed gas, silane gas is in a ratio of 8 to10 relative to mixed gas.
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