A semiconductor device comprising a thin film transistor formed on an insulator, said thin film transistor comprising at least a source region, a drain region, a channel forming region, and a gate electrode with a gate insulating film interposed therebetween; and a pixel comprising a pixel electrode connected with said source or said drain region and comprising a storage capacitor, wherein said storage capacitor is formed of a shielding film provided over said thin film transistor with an insulating film interposed therebetween, an insulating layer covering said shielding film, and said pixel electrode provided in contact with said insulating layer, and wherein said insulating layer has a hole which is filled with an insulating material comprising a resin material.