发明公开
- 专利标题: ATOMIC LAYER FILM-FORMING DEVICE
- 专利标题(中): 原子层成膜装置
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申请号: EP09723417.3申请日: 2009-03-18
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公开(公告)号: EP2267183A1公开(公告)日: 2010-12-29
- 发明人: MURATA, Kazutoshi
- 申请人: Mitsui Engineering & Shipbuilding Co., Ltd.
- 申请人地址: 6-4 Tsukiji 5-chome Chuo-ku Tokyo 104-8439 JP
- 专利权人: Mitsui Engineering & Shipbuilding Co., Ltd.
- 当前专利权人: Mitsui Engineering & Shipbuilding Co., Ltd.
- 当前专利权人地址: 6-4 Tsukiji 5-chome Chuo-ku Tokyo 104-8439 JP
- 代理机构: von Puttkamer · Berngruber
- 优先权: JP2008074544 20080321
- 国际公布: WO2009116576 20090924
- 主分类号: C23C16/52
- IPC分类号: C23C16/52
摘要:
An atomic layer film forming apparatus includes a plurality of gas supply pipes (121 - 123) for supplying a source gas to a film forming chamber (101), and an exhaust portion (105) for evacuating the inside of the film forming chamber (101). Valves (131 - 133) are attached to the gas supply pipes (121 - 123), respectively. In the film forming chamber (101), film forming chamber monitors (141 - 149) are arranged to measure a state in the film forming chamber (101). Based on the results of measurement by the film forming chamber monitors (141 - 149), a controller (107) controls the openings or opening times of the valves (131 - 133). The atomic layer film forming apparatus can improve gas uniformity when a plurality of gas supply ports are used.
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