A semiconductor light emitting device includes a pump light source (12), a gain structure (16), and an out-coupling mirror (20). The gain structure is comprised of InGaN layers (22) that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed non-epitaxial Bragg reflector (32) causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure (18) may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.