发明公开
- 专利标题: Concurrent flash memory access
- 专利标题(中): 并发闪存访问
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申请号: EP11000145.0申请日: 2006-09-29
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公开(公告)号: EP2306460A3公开(公告)日: 2011-07-27
- 发明人: Kim, Jin-Ki , Pyeon, Hong Beom
- 申请人: MOSAID Technologies Incorporated
- 申请人地址: 11 Hines Road, Suite 203 Ottawa, ON K2K 2X1 CA
- 专利权人: MOSAID Technologies Incorporated
- 当前专利权人: MOSAID Technologies Incorporated
- 当前专利权人地址: 11 Hines Road, Suite 203 Ottawa, ON K2K 2X1 CA
- 代理机构: UEXKÜLL & STOLBERG
- 优先权: US722368P 20050930; US324023 20051230
- 主分类号: G11C11/4193
- IPC分类号: G11C11/4193 ; G11C11/4197 ; G11C16/06
摘要:
An apparatus, system, and method for controlling data transfer between a serial data link interface and memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple serial data links and multiple memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links.
公开/授权文献
- EP2306460A2 Concurrent flash memory access 公开/授权日:2011-04-06
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