发明公开
- 专利标题: Wavelenght variable semiconductor laser element, apparatus and method for controlling the same
- 专利标题(中): 波长可变半导体激光器元件,设备,和控制的方法
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申请号: EP11151818.9申请日: 2008-03-07
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公开(公告)号: EP2309610A3公开(公告)日: 2011-08-10
- 发明人: Fujiwara, Naoki , Ishii, Hiroyuki , Oohashi Hiromi , Okamoto, Hiroshi
- 申请人: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
- 申请人地址: 3-1, Otemachi 2-chome, Chiyoda-ku Tokyo 100-8116 JP
- 专利权人: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
- 当前专利权人: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
- 当前专利权人地址: 3-1, Otemachi 2-chome, Chiyoda-ku Tokyo 100-8116 JP
- 代理机构: TBK
- 优先权: JP2007058090 20070308
- 主分类号: H01S5/062
- IPC分类号: H01S5/062 ; H01S5/125 ; H01S5/024 ; H01S5/22 ; H01S5/042
摘要:
An object is to provide a wavelength tunable semiconductor laser device, a controller for the same and a control method for the same, which prevent wavelength drifts. The wavelength tunable semiconductor laser device includes an active region (2,3) for oscillating a laser beam, and a wavelength tuning region (4,11b) for shifting a wavelength of the laser beam. In this device, a thermal compensation region (4,11c) for converting most of the inputted electric power to heat is provided adjacent to the wavelength tuning region (4,11b), and the sum of an electric power inputted into the wavelength tuning region (4,11b) and an electric power inputted into the thermal compensation region (4,11c) is always kept constant.
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